Semiconductor detector

LD 559921
Semiconductor detector
  8  Semiconductor detector

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Description

For detecting α and β radiation (intensity measurements) and recording α energy spectra. Rapidly switching silicon photodiode with large surface area in the boundary layer of which α are fully absorbed, giving up all their energy, and β are partially absorbed, losing a portion of their energy.
The amplitude of the output pulses is proportional to the energy of the α particles. Photodiode built into BNC plug, protected from disruptive light by metal sleeve. With slit aperture for use in Rutherford scattering chamber.

Technical data

  • Radiation-sensitive surface area: 3.8 mm x 3.8 mm
  • Cut-off frequency: 1 MHz
  • Required bias voltage: 8 V ... 60 V DC
  • Dimensions: 4 cm x 1.2 cm diameter
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