IGBT 1000 V/10 A

735346

8 IGBT 1000 V/10 A

Description

This IGBT (insulated gate bipolar transistor) demonstrates the behaviour of an enhancement-mode field-effect transistor (MOSFET) at the input and the behaviour of a bipolar power transistor at the output.
With a fast acting inverse diode and an RCD protective circuit which can be switched off. For use in rapid switching applications with high voltages such as: DC controllers, switched-mode power supplies and inverters.

Technical data

Collector-emitter reverse-bias voltage (V_CES): max. 1000 V
Collector current (I_{C AV}): max. 10 A
Collector-emitter saturation voltage (V_{CE SAT}): 3.5 V
Gate-emitter input capacitance (C_GE): 1.8 nF

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IGBT 1000 V/10 A

Description

Technical data

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